Free download hemt3/10/2024 ![]() With extensive experience on the semiconductor market, Infineon’s GaN technology brought the e-mode concept to maturity with end-to-end production in high volumes. Infineon’s CoolGaN™ is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V. Therefore, hard-switching topologies such as totem-pole PFC can be employed to achieve higher efficiency, for example in datacenter and server power supplies, in order to save energy and reduce OPEX. As Infineon’s CoolGaN™ transistors have no minority carriers and no body diode they do not exhibit a reverse recovery. The most important feature of a GaN power transistor is its reverse recovery performance. Operation at high switching frequencies allows the volume of passive components to shrink which improves GaN HEMTs reliability and overall power density. ![]() Gallium nitride transistors can then be operated with reduced dead-times which results in higher efficiency and enables passive cooling. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching applications. Gallium nitride (GaN) transistors offer fundamental advantages over silicon. ![]()
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